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Task 3: Find the Equivalent Oxide Thickness (EOT)

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 The equivalent oxide thickness is stated as a distance, which imply the thickness of silicon oxide that is required to get the similar effect as using high-k materials. The term is commonly used to describe the field effect transistors and is often given in nanometers. These formulas have been used: so that, and we can figure out that ε hk=10.6506 while ， we can get that EOT=2.8084nm.
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Background

  The object of this project is thin high-k gate stacks (HfSiO, 70%), which is bind up with MOSFET, while silicon-based integrated circuits have developed rapidly in the past years. High-k dielectric materials are one of the most popular research topics in the micro electronic industry. By using some special properties of some high-k dielectric materials, some new devices may be conducted and the limitation of the thin gate-oxide faced in semiconductor industry may be solved. Electronics based on these improve the life quality and make our life more comfortable, like internet and mobile phones. On the basis of Moore’s law, the number of transistors on the integrated circuits doubled every two years, so that the gate stacks become the concern issue. Scientists and engineers made great efforts to incorporate the high-k dielectric into a transistor. According to SIA [1], in order to maintain the development speed of the semiconductor, researchers should develop constraints like new ...
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Task5. Work Function Difference (Calculate the work function difference assuming a gold (Au) gate.）

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  The work function Ф M is defined as the minimum energy required for an electron with an energy equal to Fermi level to escape from the metal into vacuum. It is shown in figure 2. For metals, the work function Ф M = Ф VA - Ф FM is constant. Thus,  Ф M (Au)=5.1eV. For semiconductors, the work function is: which is shown in figure 2. According to known conditions, the electron affinity of Si is and the Bandgap energy of silicon is The Fermi potential Ф F is equal to and is about 25mV at 300k. Thus, Fermi potential: and the work function of semiconductors: The definition of Mental-Semiconductors work function difference is: Thus, the work function difference: Figure 2: Energy band diagram explaining work function
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